The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jul. 05, 2019
Micron Technology, Inc., Boise, ID (US);
Harish N. Venkata, Allen, TX (US);
Yu-Feng Chen, Plano, TX (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Memory devices may have internal circuitry that employs voltages higher than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate, internally, higher voltages for operation. The number of available charge pumps in a memory device may be higher than the number used for certain memory operations. Gating circuitry may be used to selectively enable charge pump cores based on power demands that may be associated with a mode of operation and/or a command.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile