The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jul. 09, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method for correcting a mask layout includes providing a mask layout including first patterns, each of the first patterns having a size related to a first critical dimension (CD) value, obtaining topography data on a region of a wafer, generating a defocus map using the topography data, and correcting the mask layout on the basis of the defocus map. The generating of the defocus map includes respectively setting second CD values for a plurality of sub-regions of the mask layout. The second CD values may be set based on the topography data. The correcting of the mask layout on the basis of the defocus map comprises correcting the sizes of the first patterns to be related to the second CD values.