The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
May. 23, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/48 (2012.01); G03F 1/38 (2012.01); G03F 1/36 (2012.01); G03F 1/54 (2012.01); G03F 1/52 (2012.01); G03F 1/60 (2012.01);
U.S. Cl.
CPC ...
G03F 1/38 (2013.01); G03F 1/24 (2013.01); G03F 1/52 (2013.01); G03F 1/54 (2013.01); G03F 1/60 (2013.01);
Abstract
Disclosed is a photomask. The photomask comprises a substrate, a reflective layer on the substrate, and an absorption structure on the reflective layer. The absorption structure comprises absorption patterns spaced apart from each other on the reflective layer. The absorption structure may include dummy holes in at least one of the absorption patterns. The dummy holes exhaust hydrogen from the absorption structure. The photomask may include a barrier layer on the absorption structure. The barrier layer may reduce the amount of hydrogen entering the absorption structure.