The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Oct. 03, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wonkeun Chung, Seoul, KR;
Jae-Jung Kim, Suwon-si, KR;
Jinkyu Jang, Hwaseong-si, KR;
Sangyong Kim, Suwon-si, KR;
Hoonjoo Na, Hwaseong-si, KR;
Dongsoo Lee, Gunpo-si, KR;
Sangjin Hyun, Suwon-si, KR;
Samsung Electronic Co., Ltd., , KR;
Abstract
A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.