The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Feb. 12, 2016
International Business Machines Corporation, Armonk, NY (US);
Stmicroelectronics, Inc., Coppell, TX (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Susan S. Fan, Cohoes, NY (US);
Dongseok Lee, Hwaseong-si, KR;
David Moreau, Pflugerville, TX (US);
Tenko Yamashita, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
STMICROELECTRONICS, INC., Coppell, TX (US);
Abstract
A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least one of the fins is an unwanted fin including a semiconductor material; providing a conformal protective layer over the plurality of semiconductor fins; forming a mask having an opening over the unwanted fin; removing a portion of the unwanted fin to expose a fin spike; oxidizing the fin spike to form an oxidized semiconductor material; and removing the oxidized semiconductor material to expose a fin base.