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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10615220 B1

PDFFull Text
Date of Patent:
Apr. 07, 2020

Filed:

Mar. 31, 2016

Semiconductor device and manufacturing method thereof

Applicant:

Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;

Inventors:

Noburo Hosokawa, Hamamatsu, JP;

Nao Inoue, Hamamatsu, JP;

Katsumi Shibayama, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Wael M Fahmy

Assistant Examiner:

Sarah K Salerno

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 31/0224 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/103 (2006.01); H01L 23/48 (2006.01); H01L 31/0203 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/532 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 31/02005 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/103 (2013.01); H01L 31/107 (2013.01); H01L 24/13 (2013.01); H01L 31/0203 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/11 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring that is provided on a first surface of the semiconductor substrate, an insulating layer provided on an inner surface of the through hole and a second surface of the semiconductor substrate, and a second wiring that is provided on a surface of the insulating layer and electrically connected to the first wiring in an opening. The surface of the insulating layer includes a first region, a second region, a third region, a fourth region that is curved to continuously connect the first and the second regions, and a fifth region that is curved to continuously connect the second and the third regions. An average inclination angle of the second region is smaller than that of the first region and is smaller than that of the inner surface.

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