The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Dec. 23, 2018
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Yu-Hua Chang, Newark, CA (US);

Zachary M Beiley, Oakland, CA (US);

Richard W Snow, San Mateo, CA (US);

Robin W Cheung, Cupertino, CA (US);

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 31/035209 (2013.01);
Abstract

A method for fabricating an optoelectronic device includes forming an isolation structure between an array of pixel electrodes and a built-in pad (BIP) on a dielectric layer of an integrated circuit, depositing a photosensitive film over the dielectric layer, such that at least one pinch point is formed in the photosensitive film at an edge of the isolation structure. The method further includes depositing an electrode layer, which is at least partially transparent, over the photosensitive film, etching away the photosensitive film from the BIP, and after etching away the photosensitive film, depositing a metal layer over the BIP and in contact with the electrode layer.


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