The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Dec. 19, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Juntao Li, Albany, NY (US);

Geng Wang, Stormville, NY (US);

Qintao Zhang, Mt Kisco, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 27/11273 (2013.01); H01L 29/42364 (2013.01); H01L 29/66666 (2013.01); H01L 29/513 (2013.01); H01L 29/7827 (2013.01);
Abstract

The present disclosure relates to a programmable device. The programmable device comprises a first vertical transistor; and a second vertical transistor coupled to the first vertical transistor via a shared terminal, wherein: a first gate dielectric of the first vertical transistor has a first thickness and a second gate dielectric of the second vertical transistor has a second thickness, the first thickness being greater than the second thickness, and the second gate dielectric breaks down based on an application of a gate voltage that is lower than a first breakdown voltage of the first gate dielectric and higher than a second breakdown voltage of the second gate dielectric.


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