The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Dec. 30, 2017
Applicants:

Zhanming LI, West Vancouver, CA;

Yue Fu, Coquitlam, CA;

Wai Tung NG, Thornhill, CA;

Yan-fei Liu, Kingston, CA;

Inventors:

Zhanming Li, West Vancouver, CA;

Yue Fu, Coquitlam, CA;

Wai Tung Ng, Thornhill, CA;

Yan-Fei Liu, Kingston, CA;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/367 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/49844 (2013.01); H01L 23/5386 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/14 (2013.01); H01L 25/071 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 29/0696 (2013.01); H01L 29/2003 (2013.01); H01L 29/41758 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 29/42316 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/06179 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/14135 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/1015 (2013.01); H01L 2924/1016 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10156 (2013.01); H01L 2924/10162 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01);
Abstract

Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.


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