The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Mar. 13, 2017
Denso Corporation, Kariya, Aichi-pref., JP;
Shogo Ikeura, Kariya, JP;
Yusuke Nonaka, Kariya, JP;
Shinichirou Yanagi, Kariya, JP;
Seiji Noma, Kariya, JP;
Shinya Sakurai, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A buried n-type region is provided in a surface layer portion of an n-type body layer of a Pch MOSFET. This makes it possible to lower the threshold voltage Vt. In a portion of the n-type body layer other than the buried n-type region, since an n-type impurity concentration can be kept relatively high, the threshold voltage Vt can be lowered while securing an on-breakdown voltage. Furthermore, since an accumulation region is configured by an n-type active layer, a partial high concentration portion is not formed in a p-type drift layer. Therefore, as in the case where the partial high concentration portion is generated in the p-type drift layer, a reduction in a breakdown voltage caused by an electric field concentration can be restricted from occurring with a distribution in which equipotential lines are concentrated.