The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Aug. 30, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Duohui Bei, Shanghai, CN;
Abstract
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate including a device region, and forming a functional layer on the substrate. The method also includes forming a plurality of discrete initial core layers on the functional layer. Adjacent initial core layers are spaced apart by a first gap. In addition, the method includes forming a sidewall spacer on a sidewall surface of an initial core layer, and forming a first opening in the functional layer by removing the functional layer at a bottom of the first gap. Moreover, the method includes forming a core layer and a second gap between sidewall spacers by performing a patterning process to remove a portion of the initial core layer. Further, the method includes forming a second opening by removing the functional layer exposed at a bottom of the second gap.