The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Oct. 31, 2018
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Kun-Che Wu, Taichung, TW;

Kao-Tsair Tsai, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); H01L 21/02164 (2013.01); H01L 21/31144 (2013.01); H01L 28/40 (2013.01);
Abstract

A method of forming semiconductor devices includes providing a substrate with a patterned material layer formed thereon, forming a material layer on the patterned material layer, wherein the material layer has a first region with a lower top surface and a second region with a higher top surface, forming a flowable material layer on the material layer, wherein the flowable material layer exposes at least a portion of the second region of the material layer, removing the exposed portion of the second region of the material layer with the flowable material layer as a stop layer, removing the flowable material layer, and planarizing the material layer.


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