The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jun. 07, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Roland Rupp, Lauf, DE;
Alexander Breymesser, Villach, AT;
Andre Brockmeier, Villach, AT;
Ronny Kern, Finkenstein, AT;
Francisco Javier Santos Rodriguez, Villach, AT;
Carsten von Koblinski, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 29/36 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/2654 (2013.01); H01L 21/26506 (2013.01); H01L 21/31111 (2013.01); H01L 29/36 (2013.01); H01J 2237/31701 (2013.01); H01L 21/0465 (2013.01); H01L 21/26513 (2013.01); H01L 21/26546 (2013.01);
Abstract
A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.