The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Jul. 13, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Changhan Hobie Yun, San Diego, CA (US);

Mario Francisco Velez, San Diego, CA (US);

Nosun Park, Incheon, KR;

Wei-Chuan Chen, San Diego, CA (US);

Niranjan Sunil Mudakatte, San Diego, CA (US);

Xiaoju Yu, San Diego, CA (US);

Paragkumar Ajaybhai Thadesar, San Diego, CA (US);

Jonghae Kim, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01F 17/00 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01F 17/0006 (2013.01); H01L 23/5226 (2013.01); H01L 23/5227 (2013.01); H01L 27/0207 (2013.01); H01L 28/10 (2013.01);
Abstract

Aspects of the present disclosure provide three-dimensional (3D) through-glass-via (TGV) inductors for use in electronic devices. In some embodiments, a first portion of a 3D TGV inductor may be formed in a first wafer and a second portion of a 3D TGV may be formed in a second wafer. The first portion and second portion may be bonded together in a bonded wafer device thereby forming a larger inductor occupying relatively little wafer space on the first and the second wafers.


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