The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Dec. 01, 2017
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Axel Scherer, Pasadena, CA (US);

Peter A Petillo, Lawrence, KS (US);

Deepan Kishore Kumar, Pasadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/14 (2006.01); C23C 16/455 (2006.01); C23C 14/34 (2006.01); C23C 16/06 (2006.01); C23F 1/00 (2006.01); G03F 7/00 (2006.01); C23C 14/16 (2006.01); C23C 28/00 (2006.01); C23C 14/58 (2006.01); C23C 28/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/14 (2013.01); C23C 14/165 (2013.01); C23C 14/34 (2013.01); C23C 14/5873 (2013.01); C23C 16/06 (2013.01); C23C 16/45525 (2013.01); C23C 28/023 (2013.01); C23C 28/42 (2013.01); C23F 1/00 (2013.01); G03F 7/0002 (2013.01);
Abstract

A multilayer structure can selectively bind certain molecules, due to reentrant spaces having an appropriate size. The multilayers can be fabricated by alternating layers of two different materials having different etching rate. The layers of the material having a higher etching rate form reentrant spaces which can protect molecules from further chemical interactions.


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