The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Jul. 02, 2018
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hiroshi Morikazu, Tokyo, JP;

Tomoki Yoshino, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); H01L 21/78 (2006.01); H01L 21/67 (2006.01); H01L 21/268 (2006.01); B23K 26/03 (2006.01); B23K 26/08 (2014.01); B23K 26/382 (2014.01); B23K 26/0622 (2014.01); B23K 26/402 (2014.01); B23K 103/00 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/032 (2013.01); B23K 26/0622 (2015.10); B23K 26/0853 (2013.01); B23K 26/382 (2015.10); B23K 26/402 (2013.01); H01L 21/268 (2013.01); H01L 21/67092 (2013.01); H01L 21/78 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08);
Abstract

A laser processing method includes holding a single crystal silicon wafer as a workpiece, selecting a laser beam having a wavelength of 1950 nm or more in a transmission wavelength region to the single crystal silicon wafer, and applying the laser beam to the single crystal silicon wafer along a predetermined area with the focal point of the laser beam set inside the wafer, thereby forming a plurality of shield tunnels arranged along the predetermined area. Each shield tunnel is composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The fine hole extends from a beam applied surface of the wafer where the laser beam is applied to the other surface opposite to the beam applied surface.


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