The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Jun. 20, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Chia Ching Yeo, Singapore, SG;
Khee Yong Lim, Singapore, SG;
Kiok Boone Elgin Quek, Singapore, SG;
Donald R. Disney, Cupertino, CA (US);
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 27/1203 (2013.01); H01L 29/0611 (2013.01); H01L 29/0886 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to extended drain MOSFET structures with a dual oxide thickness and methods of manufacture. The structure includes an extended drain metal oxide semiconductor transistor (EDMOS) comprising a gate structure with a dual oxide scheme.