The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Aug. 06, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/308 (2013.01); H01L 21/31111 (2013.01); H01L 21/32139 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes gate structures formed transversely over semiconductor fins on a substrate. The gate material includes a gate conductor and a dielectric cap on the gate conductor. The device further includes unipolar spacers formed over the gate structures only. The semiconductor fins are free from the unipolar spacers, and the unipolar spacers have a substantially uniform thickness vertically along the gate structures and include a spacer material with an etch selectivity greater than SiN for oxide removal.