The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Nov. 14, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Yukihiro Nagai, Saijo, JP;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/112 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/5256 (2013.01); H01L 29/0649 (2013.01);
Abstract
A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI, and a second horizontal portion connected to the vertical portion. The semiconductor device further includes a first spacer on a sidewall of the first gate structure and the STI and a second spacer on another sidewall of the first gate structure and on the second horizontal portion.