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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10607902 B1

PDFFull Text
Date of Patent:
Mar. 31, 2020

Filed:

Dec. 30, 2017

Method for measuring proximity effect on high density magnetic tunnel junction devices in a magnetic random access memory device

Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Thomas D. Boone, San Carlos, CA (US);

Pradeep Manandhar, Fremont, CA (US);

Assignee:

SPIN MEMORY, INC., Fremont, CA (US);

Attorney:

Zilka-Kotab, P.C.

Primary Examiner:

Tony Tran

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01F 10/32 (2006.01); G11C 29/08 (2006.01); H01F 41/34 (2006.01); H01L 43/12 (2006.01); G11C 29/04 (2006.01); H01L 43/10 (2006.01); G11C 29/56 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G11C 11/161 (2013.01); G11C 29/04 (2013.01); G11C 29/08 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 41/34 (2013.01); H01L 21/0277 (2013.01); H01L 21/76877 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/1675 (2013.01); G11C 2029/0403 (2013.01); G11C 2029/5602 (2013.01); H01L 43/10 (2013.01);
Abstract

A method for testing individual memory elements or sets of memory elements of an array of magnetic memory elements. The method involves forming a mask such as photoresist mask over an array memory elements. The mask is configured with an opening over each of the selected memory elements to be tested. The mask can be formed of photoresist which can be patterned by focused electron beam exposure to form opening at features sizes smaller than those available using standard photolithographic processes. An electrically conductive material is deposited over the mask and into the openings in the mask to make electrical contact with the selected memory element or memory elements to be tested. Then, electrical connection can be made with the electrically conductive material to test the selected one or more magnetic memory elements.

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