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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10607848 B1

PDFFull Text
Date of Patent:
Mar. 31, 2020

Filed:

Apr. 17, 2018

Method of fabricating semiconductor device

Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yuan-Chieh Chiu, Hsinchu, TW;

Shih-Ping Hong, Hsinchu, TW;

Kuang-Chao Chen, Hsinchu, TW;

Yen-Ju Chen, Hsinchu, TW;

Assignee:

MACRONIX International Co., Ltd., Hsinchu, TW;

Attorney:

J.C. Patents

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 23/532 (2006.01); H01L 23/31 (2006.01); H01L 21/28 (2006.01); H01L 33/44 (2010.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/3105 (2013.01); H01L 21/76826 (2013.01); H01L 21/76831 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 21/28247 (2013.01); H01L 21/28255 (2013.01); H01L 21/28264 (2013.01); H01L 23/3171 (2013.01); H01L 23/3178 (2013.01); H01L 23/3185 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 31/1868 (2013.01); H01L 33/44 (2013.01);
Abstract

Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed on the substrate. A first passivation material layer is formed on sidewalls of the opening and on the substrate. A treatment process is performed to the first passivation material layer to form a second passivation material layer. A first surface of the second passivation material layer and a second surface (at an inner side) of the second passivation material layer are differ in a property, and the first surface is located at a side of the second passivation material layer relatively away from the material layer.

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