The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Dec. 14, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Swaminathan Srinivasan, Pleasanton, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Nicolas Breil, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); C23C 16/04 (2006.01); C23C 14/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28562 (2013.01); C23C 14/042 (2013.01); C23C 16/042 (2013.01); H01L 21/02208 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/3105 (2013.01); H01L 21/76864 (2013.01); H01L 21/76889 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.