The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Aug. 13, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Eun Chu Oh, Hwaseong-si, KR;

Pilsang Yoon, Hwaseong-si, KR;

Jun Jin Kong, Yongin-si, KR;

Jisu Kim, Seoul, KR;

Hong Rak Son, Anyang-si, KR;

Jinbae Bang, Anyang-si, KR;

Daeseok Byeon, Seongnam-si, KR;

Taehyun Song, Suwon-si, KR;

Dongjin Shin, Hwaseong-si, KR;

Dongsup Jin, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 29/02 (2006.01); G11C 16/04 (2006.01); G11C 29/50 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/04 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3495 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/50004 (2013.01); G11C 2029/5004 (2013.01); G11C 2211/5634 (2013.01);
Abstract

An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.


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