The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Jan. 03, 2019
Applicant:
Microsemi Soc Corp., San Jose, CA (US);
Inventor:
John L. McCollum, Orem, UT (US);
Assignee:
Microsemi SoC Corp., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 27/24 (2006.01); H03K 19/094 (2006.01); H03K 19/1776 (2020.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); H01L 27/2436 (2013.01); H01L 45/12 (2013.01); H03K 19/0941 (2013.01); H03K 19/1776 (2013.01);
Abstract
A nonvolatile memory cell includes a first voltage supply node, a second voltage supply node, an output node, a resistive random access memory device having a first electrode and a second electrode, the first electrode connected to the first voltage supply node, at least one p-channel transistor connected between the second electrode of the resistive random access memory device and the output node, at least one n-channel transistor connected between the output node and the second voltage supply node, and an inverter connected between the output node and a gate of the at least one n-channel transistor.