The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Sep. 14, 2016
Qualcomm Incorporated, San Diego, CA (US);
Rami Salem, San Diego, CA (US);
Lesly Zaren V. Endrinal, San Diego, CA (US);
Hyeokjin Lim, San Diego, CA (US);
Hadi Bunnalim, San Diego, CA (US);
Robert Kim, San Marcos, CA (US);
Lavakumar Ranganathan, San Diego, CA (US);
Mickael Malabry, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.