The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jul. 03, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Sinan Goktepeli, San Diego, CA (US);
Plamen Vassilev Kolev, San Diego, CA (US);
Peter Graeme Clarke, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 21/02164 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/1012 (2013.01); H01L 29/1095 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/45 (2013.01); H01L 29/66242 (2013.01);
Abstract
A Bipolar Junction Transistor (BJT) comprises an emitter, a collector, and a base between the emitter and the collector. The BJT also comprises an emitter contact on a first side of the BJT, a base contact on the first side of the BJT, and a collector contact on a second side of the BJT. The BJT further comprises a Deep Trench Isolation (DTI) region extending from the first side of the BJT to the second side of the BJT.