The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Oct. 11, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ching-Wen Hung, Tainan, TW;

Chih-Sen Huang, Tainan, TW;

Yi-Wei Chen, Taichung, TW;

Chun-Hsien Lin, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 29/42376 (2013.01);
Abstract

A semiconductor structure is disclosed. The semiconductor structure includes a substrate, and an interlayer dielectric disposed on the substrate which has agate structure therein. The gate structure further includes a gate electrode with a protruding portion, and a gate dielectric layer disposed between the gate electrode and the substrate. A spacer is disposed between the interlayer dielectric and the gate electrode. An insulating cap layer is disposed atop the gate electrode and encompasses the top and the sidewall of the protruding portion.


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