The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

May. 02, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Liang Chen, Hsinchu, TW;

Tzu-Yi Hung, Kaohsiung, TW;

Min-Hsin Wu, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01T 4/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01T 4/10 (2013.01);
Abstract

An electrostatic discharge protection device includes: a semiconductor substrate; an N-type doped well on the substrate, the N-type doped well including a first N+ region and a first P+ region; a P-type doped well on the substrate, the P-type doped well including a second N+ region, a third N+ region, and a second P+ region between the second N+ region and the third N+ region; and a first contact positioned above a surface of the N-type doped well between the first N+ region and the first P+ region.


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