The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Nov. 21, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Eric A. Joseph, White Plains, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Adam M. Pyzyna, Cortlandt Manor, NY (US);

HsinYu Tsai, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3213 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/32136 (2013.01); H01L 21/76886 (2013.01); H01L 23/528 (2013.01); H01L 23/53238 (2013.01); H01L 27/2463 (2013.01);
Abstract

A process for forming patterned copper lines, a pattern of copper lines, and an electronic device having patterned copper lines and at least one CMOS circuit. The process includes assembling an etch stack, wherein the etch stack includes a resist and a copper substrate. The process also includes lithographically patterning the resist to produce a template, and forming a patterned block copolymer mask layer by directed self-assembly. Additionally, the process includes etching portions of the block copolymer mask layer to produce a patterned block copolymer mask layer, and transferring a pattern formed by the template and the patterned block copolymer mask layer to the copper substrate to form the patterned copper lines.


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