The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jan. 31, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
KeunHee Bai, Suwon-si, KR;
Jongchul Park, Seongnam-si, KR;
Seungjun Kim, Daejeon, KR;
Seungju Park, Hwaseong-si, KR;
Young-Ju Park, Suwon-si, KR;
Hak-Sun Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.