The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jan. 10, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Gyu-hee Park, Hwaseong-si, KR;
Youn-soo Kim, Yongin-si, KR;
Hyun-jun Kim, Seoul, KR;
Jin-sun Lee, Suwon-si, KR;
Jae-soon Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.