The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jun. 09, 2017
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventor:
Po-Han Jen, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01); H01G 4/005 (2006.01); H01L 23/522 (2006.01); H01G 4/012 (2006.01); H01L 49/02 (2006.01); H01G 4/12 (2006.01); H01G 4/08 (2006.01); H01G 4/33 (2006.01);
U.S. Cl.
CPC ...
H01G 4/06 (2013.01); H01G 4/005 (2013.01); H01G 4/012 (2013.01); H01G 4/08 (2013.01); H01G 4/1272 (2013.01); H01G 4/33 (2013.01); H01L 23/5223 (2013.01); H01L 28/91 (2013.01);
Abstract
A capacitor includes a first electrode, a dielectric, and a second electrode. The first electrode is located on a dielectric layer. The dielectric covers the sidewall and the top surface of the first electrode. The second electrode covers the dielectric and the dielectric layer, wherein the orthographic projection area of the second electrode on the dielectric layer is greater than the orthographic projection area of the first electrode on the dielectric layer. The capacitor of the invention has good reliability.