The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Dec. 17, 2018
Spin Memory, Inc., Wilmington, DE (US);
Satoru Araki, San Jose, CA (US);
SPIN MEMORY, INC., Wilmington, DE (US);
Abstract
A magnetic storage device includes a first wire extending along a first direction and a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position along the first wire. The magnetic storage device further includes write circuitry, including: a first transistor coupled to the first wire to apply a first write current along the first wire in the first direction; and a second transistor to select an individual SOT-MRAM device and apply a second write current to the individual SOT-MRAM device concurrently with the application of the first write current. The second write current is along an axis of the individual SOT-MRAM device. The magnetic storage device further includes readout circuitry to read a data value stored by the individual SOT-MRAM device.