The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Aug. 09, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Ashay Narsale, Newark, CA (US);

Robert M. Walker, Raleigh, NC (US);

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/30 (2006.01); G08C 25/00 (2006.01); H03M 13/00 (2006.01); H04L 1/00 (2006.01); G06F 12/0868 (2016.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0868 (2013.01); G11C 11/5678 (2013.01); G11C 29/52 (2013.01); G06F 2212/7209 (2013.01); G11C 2211/5641 (2013.01);
Abstract

A method to cache memory requests while accounting for phase change memory cell drift is described. The method includes adding, in response to receiving a write memory request from a host system, an entry to a cache that includes user data of the write memory request, wherein the write memory request is directed to a set of phase change memory cells; adding, in response to receiving the write memory request, an entry in a first content-addressable memory (CAM), wherein the entry in the first CAM includes a reference to the entry in the cache that includes the user data of the write memory request; writing the user data of the write memory request to the set of phase change memory cells; and adding an entry to a second CAM, wherein the entry in the second CAM includes a reference to the entry in the cache that includes the user data.


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