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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10599053 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Jul. 15, 2019

Lithographic apparatus and method for loading a substrate

Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Abraham Alexander Soethoudt, Eindhoven, NL;

Thomas Poiesz, Veldhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:

Pillsbury Winthrop Shaw Pittman, LLP

Primary Examiner:

Peter B Kim

Int. Cl.
CPC ...
G03B 27/58 (2006.01); G03F 7/20 (2006.01); B01D 53/34 (2006.01); B01D 53/56 (2006.01); B01D 53/79 (2006.01); B05B 13/02 (2006.01); B05B 13/04 (2006.01); F23J 15/00 (2006.01); B05B 15/656 (2018.01); B05B 15/68 (2018.01); B05B 13/06 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70866 (2013.01); B01D 53/346 (2013.01); B01D 53/56 (2013.01); B01D 53/79 (2013.01); B05B 13/0278 (2013.01); B05B 13/041 (2013.01); B05B 15/656 (2018.02); B05B 15/68 (2018.02); F23J 15/003 (2013.01); G03F 7/707 (2013.01); G03F 7/70783 (2013.01); B01D 2251/2062 (2013.01); B01D 2251/2067 (2013.01); B01D 2257/402 (2013.01); B01D 2257/404 (2013.01); B01D 2258/0283 (2013.01); B01D 2259/124 (2013.01); B05B 13/0627 (2013.01); F23J 2219/20 (2013.01); Y02C 20/10 (2013.01);
Abstract

A lithographic apparatus includes a support table and a gas extraction system. The gas extraction system is configured to extract gas from a gap between the base surface of the support table and a substrate through at least one gas extraction opening when the substrate is being lowered onto the support table. The lithographic apparatus is configured such that gas is extracted from the gap at a first loading flow rate when the distance between the substrate and the support plane is greater than a threshold distance and gas is extracted from the gap at a second loading flow rate when the distance between the substrate and the support plane is less than the threshold distance, wherein the second loading flow rate is lower than the first loading flow rate.

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