The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Jun. 27, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Chenchen Jacob Wang, Singapore, SG;
Michael Nicolas Albert Tran, Singapore, SG;
Dimitri Houssameddine, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 27/226 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.