The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Sep. 10, 2018
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Tatsuya Nishiwaki, Nonoichi Ishikawa, JP;
Kohei Oasa, Nonoichi Ishikawa, JP;
Hiroshi Matsuba, Fujisawa Kanagawa, JP;
Kikuo Aida, Nomi Ishikawa, JP;
Hung Hung, Kawasaki Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.