The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Oct. 25, 2018
Winbond Electronics Corp., Taichung, TW;
Shu-Ming Lee, Taichung, TW;
Tzu-Ming Ou Yang, Tainan, TW;
WINBOND ELECTRONICS CORP., Taichung, TW;
Abstract
A memory device and a method for manufacturing the memory device are provided. The memory device includes two first gate structures and a multilayer insulating structure. The multilayer insulating structure includes a first insulating layer, a second insulating layer, a third insulating layer, and a fourth insulating layer sequentially from bottom to top. The width of the second insulating layer is equal to that of the third insulating layer, and smaller than that of the first insulating layer. The width of the bottom surface of the fourth insulating layer is greater than the width of the top surface of the third insulating layer. The memory device includes a capacitor contact plug formed between the first gate structures. The capacitor contact plug includes a first contact element, a buffering layer, and a second contact element. The second contact element has a top surface wider than its bottom surface.