The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
May. 10, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Erhu Zheng, Shanghai, CN;
Jinhe Qi, Shanghai, CN;
Abstract
This application relates to the technical field of semiconductors, and teaches methods for manufacturing a semiconductor structure. One implementation of a method includes: forming a semiconductor layer at a surface of a to-be-etched material layer on a substrate; forming an amorphous carbon layer on the semiconductor layer; forming a patterned mask layer on the amorphous carbon layer; and etching the amorphous carbon layer, the semiconductor layer, and the to-be-etched material layer using the patterned mask layer as a mask. This application may improve uniformity of the amorphous carbon layer, so that a position of a pattern that is formed after the to-be-etched material layer is etched does not deviate from an expected position, and a shape of the pattern is an expected shape.