The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Aug. 13, 2018
Toshiba Memory Corporation, Minato-ku, JP;
Ryuichi Fujimoto, Ota, JP;
Kan Shimizu, Saitama, JP;
Shigehito Saigusa, Yokohama, JP;
Motoki Nagata, Yokohama, JP;
Yumi Takada, Yokohama, JP;
Hitoshi Shiga, Kawasaki, JP;
Makoto Morimoto, Yokohama, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor memory device includes: a word line; a first memory cell; a first circuit; and a second circuit. The first memory cell is connected to the word line. The first circuit generates a first voltage having a waveform including a first time period during which a voltage value increases with time and a second time period during which the voltage value decreases with time, and applies the generated first voltage to the word line. The second circuit measures first time from a first timing when a state of the first memory cell changes according to the first voltage to a second timing when the state of the first memory cell changes according to the first voltage after the first timing. The second circuit determines first data stored in the first memory cell on the basis of the measured first time.