The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Dec. 09, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Takeshi Kumagai, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/04 (2006.01); H01J 37/32 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45544 (2013.01); C23C 16/045 (2013.01); C23C 16/405 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); H01J 37/3244 (2013.01); H01J 37/32513 (2013.01); H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01J 37/32807 (2013.01);
Abstract

A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, a halogen-containing gas is supplied to a top surface of a substrate and an upper portion of a recessed pattern, thereby forming an adsorption blocking group on the top surface of the substrate and the upper portion of the recessed pattern. A first reaction gas is supplied to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group is not formed on. A second reaction gas reactable with the first reaction gas is supplied to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas.


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