The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Nov. 28, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Yijun Chen, Shanghai, CN;
Yu Hua, Shanghai, CN;
Kuanchieh Yu, Shanghai, CN;
Chao Wang, Shanghai, CN;
Shan Zhang, Shanghai, CN;
Abstract
A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a substrate structure; forming a first metal layer on the substrate structure; forming a second metal layer on the first metal layer; forming a first oxide layer on the second metal layer at a first temperature; and conducting the remaining manufacturing processes including thermal processes at a second temperature that is higher than the first temperature. This method reduces the concentration of the first metal diffused into the surface of the second metal layer during the thermal processes, thus reducing the amount of the oxide of the first metal formed on the surface of the second metal layer. Therefore, it is beneficial to the establishment of metal wire connections.