The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Jun. 18, 2018
General Electric Company, Schenectady, NY (US);
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);
Reza Ghandi, Niskayuna, NY (US);
David Alan Lilienfeld, Niskayuna, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);
Abstract
The subject matter disclosed herein relates to super-junction (SJ) power devices and, more specifically, to edge termination techniques for SJ power devices. A semiconductor super-junction (SJ) device includes one or more epitaxial (epi) layers having a termination region disposed adjacent to an active region. The termination region includes a plurality of vertical pillars of a first and a second conductivity-type, wherein, moving outward from the active region, a respective width of each successive vertical pillar is the same or smaller. The termination region also includes a plurality of compensated regions having a low doping concentration disposed directly between a first side of each vertical pillar of the first conductivity-type and a first side of each vertical pillar of the second conductivity-type, wherein, moving outward from the active region, a respective width of each successive compensated region is the same or greater.