The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
May. 30, 2017
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Lawrence A. Clevenger, Rhinebeck, NY (US);
Balasubramanian S. Pranatharthi Haran, Watervliet, NY (US);
John Zhang, Altamont, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments are directed to a method of forming a semiconductor device and resulting structures having self-aligned spacer protection layers. The method includes forming a first sacrificial gate adjacent to a second sacrificial gate on a substrate. A dielectric layer is formed on the substrate and above top surfaces of the first and second sacrificial gates. A self-aligned protection region is formed to cover a first portion of the dielectric layer and a second uncovered portion of the dielectric layer is removed. The first portion of the dielectric layer defines a spacer after the second portion of the dielectric layer is removed.