The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Feb. 08, 2018
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Ryota Kishi, Niigata, JP;

Masahiko Ishida, Niigata, JP;

Shigeyoshi Netsu, Niigata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 3/00 (2006.01); C01B 33/107 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C01B 33/10763 (2013.01); B01D 3/009 (2013.01); C01B 33/10794 (2013.01); C30B 29/06 (2013.01); C30B 35/007 (2013.01);
Abstract

A system for purifying trichlorosilane that can prevent re-contamination by the dissociation of an adduct occurring in association with the conversion of high boiling point compounds or the remaining of impurities due to an equilibrium constraint is provided. Trichlorosilane containing impurities serving as a donor or an acceptor in silicon crystals is supplied to a multistage impurity conversion step. These impurities in the trichlorosilane are converted into high boiling point compounds in the presence of a distillation aid. A plurality of impurity conversion step sections (10to 10) are connected in series, and any of the impurity conversion step sections comprises a reception section a for the trichlorosilane from the preceding stage section, an introduction section b for the distillation aid, a transmission section c for the trichlorosilane to the subsequent stage section, and a drain section d that discharges a remainder out of the impurity conversion step section.


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