The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Mar. 05, 2018
Applicant:
D3 Semiconductor Llc, Addison, TX (US);
Inventors:
Thomas E. Harrington, III, Carrollton, TX (US);
Zhijun Qu, Frisco, TX (US);
Assignee:
D3 Semiconductor LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 39/22 (2006.01); H01L 39/14 (2006.01); H01L 29/739 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7396 (2013.01); H01L 21/02016 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 39/145 (2013.01); H01L 39/228 (2013.01);
Abstract
Methods and designs are provided for a vertical power semiconductor switch having an IGBT-with-built-in-diode bottom-side structure combined with a SJMOS topside structure in such a way as to provide fast switching with low switching losses (MOSFET), low on-resistance at low currents (SJMOS), low on-resistance at high currents (IGBT), and high current-density capability (IGBT).