The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Nov. 16, 2018
Applicant:
Spin Memory, Inc., Fremont, CA (US);
Inventors:
Steven Watts, San Jose, CA (US);
Georg Martin Wolf, San Francisco, CA (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Bartlomiej Kardasz, Pleasanton, CA (US);
Mustafa Pinarbasi, Morgan Hill, CA (US);
Assignee:
Spin Memory, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 10/30 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01F 10/30 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01L 43/08 (2013.01);
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM bit cell consists of a magnetic tunnel junction stack having a significantly improved performance of the magnetic storage layer. The MRAM device utilizes a polarizer layer with a magnetic vector that can switch between a stabilizing magnetic direction and a programming magnetic direction.