The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Sep. 28, 2018
Applicant:
Win Semiconductors Corp., Tao Yuan, TW;
Inventors:
Assignee:
WIN Semiconductors Corp., Tao Yuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H03K 19/094 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0605 (2013.01); H01L 21/02395 (2013.01); H03K 19/094 (2013.01);
Abstract
A GaAs (Gallium Arsenide) cell is provided. The GaAs cell comprises at least a GaAs substrates; a plurality of drain electrodes and a plurality of source electrodes, disposed on the at least a GaAs substrates; a gate electrode, disposed between the plurality of drain electrodes and the plurality of source electrodes, elongated along a first direction; a first anchor at a first end of the gate electrode; and a second anchor at a second end of the gate electrode; wherein a gate length of the gate electrode on a second direction is smaller than both a first width of the first anchor and a second width of the second anchor along the second direction.