The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Sep. 04, 2018
Flosfia Inc., Kyoto, JP;
Kyoto University, Kyoto, JP;
Riena Jinno, Kyoto, JP;
Shizuo Fujita, Kyoto, JP;
Kentaro Kaneko, Kyoto, JP;
Tokiyoshi Matsuda, Kyoto, JP;
Takashi Shinohe, Kyoto, JP;
Toshimi Hitora, Kyoto, JP;
FLOSFIA INC., Kyoto, JP;
KYOTO UNIVERSITY, Kyoto, JP;
Abstract
In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.