The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Dec. 13, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kijong Park, Yongin-si, KR;
Jun-Youl Yang, Seoul, KR;
Yongsun Ko, Suwon-si, KR;
Kyunghyun Kim, Seoul, KR;
Taeheon Kim, Busan, KR;
Jae Jin Shin, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32009 (2013.01); H01J 37/3299 (2013.01); H01J 37/32449 (2013.01); H01J 37/32899 (2013.01); H01J 37/32926 (2013.01); H01J 37/32935 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.